Qorvo UF4C and UF4SC SiC field-effect transistors
17 June, 2022Qorvo has released the UF4C and UF4SC 1200 V silicon carbide field-effect transistors (FETs), a fourth-generation family of devices offering leading figures of merit in on-resistance.
GaN Systems GS-065-060-3-B/T transistors
07 June, 2022The GS-065-060-3-B is bottom-side cooled, while the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications.
UnitedSiC UF3N170400B7S JFET
28 April, 2022The transistor can be utilised by engineers for overcurrent protection circuits, DC/AC inverters, switch-mode power supplies, power factor correction modules, motor drives and induction heating applications.
Printing high-performance, perovskite-based transistors
30 March, 2022New technology enables solution-processed perovskite transistors to be simply printed as semiconductor-like circuits.
Recommendations for optimising thin-film transistors
02 March, 2022Researchers have arrived at a set of recommendations that may see an explosion in the research effort into unconventional electronic devices.
Improving defect detection in transistors
07 February, 2022Researchers have revived and improved a once-reliable technique known as charging pumping to identify and count defects in transistors — the building blocks of modern electronic devices.
Toshiba MG600Q2YMS3 and MG400V2YMS3 silicon carbide MOSFET modules
01 February, 2022Toshiba Electronic Devices & Storage has launched two silicon carbide (SiC) MOSFET dual modules: the MG600Q2YMS3, with a voltage rating of 1200 V and drain current rating of 600 A; and the MG400V2YMS3, with a voltage rating of 1700 V and drain current rating of 400 A.
STMicroelectronics STPOWER third-generation SiC MOSFETs
21 January, 2022The SiC devices are optimised for high-end automotive applications including EV traction inverters, onboard chargers (OBCs) and DC/DC converters, as well as e-climate compressors.
Stable, high-mobility transistors for next-gen displays
22 December, 2021The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin-film transistors (TFTs) has been overcome.
Toshiba TLX9188 transistor output automotive photocoupler
23 November, 2021Toshiba Electronic Devices & Storage has launched a high-voltage transistor output photocoupler, the TLX9188, for isolated signal communication in automotive equipment.
STMicroelectronics MDmesh K6 series MOSFETs
16 November, 2021STMicroelectronics' super-junction MDmesh K6 series MOSFETs are designed to enhance several key parameters to minimise system-power losses.
A sensitive method for detecting transistor defects
14 October, 2021Researchers devised a highly sensitive method of detecting and counting defects in transistors — a matter of urgent concern to the semiconductor industry.
ROHM RGWxx65C series hybrid IGBTs
03 September, 2021ROHM's RGWxx65C series hybrid IGBTs (RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR) feature an integrated 650 V SiC Schottky barrier diode.
NXP Semiconductors A3G26D055NT4 Airfast RF power GaN transistor
01 September, 2021The A3G26D055NT4 is a 55 W dual-path transistor that can be used in a wide range of applications from 100–2800 MHz, including wireless infrastructure, RF energy, and wideband and tactical communications.
Qorvo QPD0011 GaN-on-SiC HEMT
13 August, 2021The QPD0011 high-electron mobility transistor (HEMT), from Qorvo, delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE and WCDMA systems.
