Improving defect detection in transistors
07 February, 2022Researchers have revived and improved a once-reliable technique known as charging pumping to identify and count defects in transistors — the building blocks of modern electronic devices.
Toshiba MG600Q2YMS3 and MG400V2YMS3 silicon carbide MOSFET modules
01 February, 2022Toshiba Electronic Devices & Storage has launched two silicon carbide (SiC) MOSFET dual modules: the MG600Q2YMS3, with a voltage rating of 1200 V and drain current rating of 600 A; and the MG400V2YMS3, with a voltage rating of 1700 V and drain current rating of 400 A.
STMicroelectronics STPOWER third-generation SiC MOSFETs
21 January, 2022The SiC devices are optimised for high-end automotive applications including EV traction inverters, onboard chargers (OBCs) and DC/DC converters, as well as e-climate compressors.
Stable, high-mobility transistors for next-gen displays
22 December, 2021The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin-film transistors (TFTs) has been overcome.
Toshiba TLX9188 transistor output automotive photocoupler
23 November, 2021Toshiba Electronic Devices & Storage has launched a high-voltage transistor output photocoupler, the TLX9188, for isolated signal communication in automotive equipment.
STMicroelectronics MDmesh K6 series MOSFETs
16 November, 2021STMicroelectronics' super-junction MDmesh K6 series MOSFETs are designed to enhance several key parameters to minimise system-power losses.
A sensitive method for detecting transistor defects
14 October, 2021Researchers devised a highly sensitive method of detecting and counting defects in transistors — a matter of urgent concern to the semiconductor industry.
ROHM RGWxx65C series hybrid IGBTs
03 September, 2021ROHM's RGWxx65C series hybrid IGBTs (RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR) feature an integrated 650 V SiC Schottky barrier diode.
NXP Semiconductors A3G26D055NT4 Airfast RF power GaN transistor
01 September, 2021The A3G26D055NT4 is a 55 W dual-path transistor that can be used in a wide range of applications from 100–2800 MHz, including wireless infrastructure, RF energy, and wideband and tactical communications.
Qorvo QPD0011 GaN-on-SiC HEMT
13 August, 2021The QPD0011 high-electron mobility transistor (HEMT), from Qorvo, delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE and WCDMA systems.
STMicroelectronics STPOWER LDMOS transistors
06 August, 2021STMicroelectronics is adding a range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of commercial and industrial applications.
Vertical organic transistor technology developed
22 July, 2021Physicists have demonstrated for the first time vertical organic transistors (organic permeable base transistors, OPBTs) integrated into functional circuits.
Toshiba DTMOSVI series TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z MOSFETs
18 March, 2021Toshiba Electronic Devices & Storage has launched a range of 650 V super junction power MOSFETs in its DTMOSVI series, each housed in a TOLL (TO-leadless) package.
Teledyne e2v HiRel TDG650E30B and TDG650E15B GaN HEMTs
07 January, 2021Teledyne e2v HiRel has added two ruggedised GaN power HEMTs (high electron mobility transistors) to its 650 V, high-power family of products based on GaN Systems technology.
Ultrasensitive transistor detects herbicide in water
10 December, 2020A new polymer-based, solid-state transistor can more sensitively detect a weed killer in drinking water than existing hydrogel-based fluorescence sensor chips.
