Toshiba TLX9188 transistor output automotive photocoupler
23 November, 2021Toshiba Electronic Devices & Storage has launched a high-voltage transistor output photocoupler, the TLX9188, for isolated signal communication in automotive equipment.
STMicroelectronics MDmesh K6 series MOSFETs
16 November, 2021STMicroelectronics' super-junction MDmesh K6 series MOSFETs are designed to enhance several key parameters to minimise system-power losses.
A sensitive method for detecting transistor defects
14 October, 2021Researchers devised a highly sensitive method of detecting and counting defects in transistors — a matter of urgent concern to the semiconductor industry.
ROHM RGWxx65C series hybrid IGBTs
03 September, 2021ROHM's RGWxx65C series hybrid IGBTs (RGW60TS65CHR, RGW80TS65CHR and RGW00TS65CHR) feature an integrated 650 V SiC Schottky barrier diode.
NXP Semiconductors A3G26D055NT4 Airfast RF power GaN transistor
01 September, 2021The A3G26D055NT4 is a 55 W dual-path transistor that can be used in a wide range of applications from 100–2800 MHz, including wireless infrastructure, RF energy, and wideband and tactical communications.
Qorvo QPD0011 GaN-on-SiC HEMT
13 August, 2021The QPD0011 high-electron mobility transistor (HEMT), from Qorvo, delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE and WCDMA systems.
STMicroelectronics STPOWER LDMOS transistors
06 August, 2021STMicroelectronics is adding a range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of commercial and industrial applications.
Vertical organic transistor technology developed
22 July, 2021Physicists have demonstrated for the first time vertical organic transistors (organic permeable base transistors, OPBTs) integrated into functional circuits.
Toshiba DTMOSVI series TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z MOSFETs
18 March, 2021Toshiba Electronic Devices & Storage has launched a range of 650 V super junction power MOSFETs in its DTMOSVI series, each housed in a TOLL (TO-leadless) package.
Teledyne e2v HiRel TDG650E30B and TDG650E15B GaN HEMTs
07 January, 2021Teledyne e2v HiRel has added two ruggedised GaN power HEMTs (high electron mobility transistors) to its 650 V, high-power family of products based on GaN Systems technology.
Ultrasensitive transistor detects herbicide in water
10 December, 2020A new polymer-based, solid-state transistor can more sensitively detect a weed killer in drinking water than existing hydrogel-based fluorescence sensor chips.
Organic field-effect transistors successfully miniaturised
22 October, 2020Engineers have developed a monolayer organic semiconductor layer for organic field-effect transistors, enabling the devices to be reduced in size without downgrading their performance.
Ultralow-power devices could harvest their own energy
21 October, 2020An international research team has created a way for ultralow-power printed electronics to recharge from ambient light or radiofrequency noise.
Toshiba TW070J120B silicon carbide MOSFET
20 October, 2020Toshiba Electronic Devices & Storage has launched the TW070J120B — a 1200 V silicon carbide (SiC) MOSFET for industrial applications that include large-capacity power supply.
Printed organic transistors for new display technologies
14 October, 2020Researchers have successfully printed and demonstrated organic transistors — electronic switches that can operate close to their theoretical speed limits.
