An organic transistor for all purposes
29 March, 2019German physicists have developed an organic transistor that functions perfectly under both low and high currents.
High-performance n-type transistor developed
12 March, 2019The unipolar n-type transistor has a high electron mobility performance of up to 7.16 cm2 V−1 s−1, heralding an exciting future for organic electronics.
Transparent transistors developed
07 February, 2019Researchers have engineered a zinc-oxide-based transparent material that displays tuneable electronic properties depending on the tweaking of a new type of dopant.
STMicroelectronics MDmesh DM6 600 V MOSFETs
31 January, 2019STMicroelectronics' MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company's super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.
STMicroelectronics MDmesh M6 series super-junction transistors
21 December, 2018STMicroelectronics' MDmesh M6 series 600 V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies.
Topological transistors could enable ultralow-energy electronics
14 December, 2018Researchers have announced a major advancement towards the creation of a topological transistor, which would burn much less energy than conventional electronics.
Renesas ISL784x4 family of MOSFET drivers
20 November, 2018The ISL78424 and ISL78444 MOSFET drivers feature single, tri-level PWM input for controlling both gate drivers, and the ISL78434 has dual independent inputs that separately control the high-side and low-side drivers.
Tiny diamond transistors could be used in spacecraft
06 November, 2018A diamond-based ultrathin transistor has the ability to outperform and be more durable than current devices deployed in high-radiation environments such as rocket engines.
Fujitsu triples the output power of GaN transistors
27 August, 2018Fujitsu and Fujitsu Laboratories have developed a crystal structure that increases both current and voltage in gallium-nitride (GaN) high-electron-mobility transistors.
Quantum transistor made from a semiconductor
13 July, 2018US researchers have made one giant leap towards quantum computing with their demonstration of the first single-photon transistor using a semiconductor chip.
Qorvo QPD1025L GaN-on-SiC transistor
06 June, 2018The QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistor, from Qorvo, operates with 1.8 kW at 65 V. It is claimed to be the industry's highest-power GaN-on-SiC radiofrequency transistor, delivering the high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.
NXP Semiconductors AFT31150N LDMOS transistor
06 March, 2018The AFT31150N is a 150 W peak power LDMOS transistor from NXP Semiconductors. It is designed for applications operating at frequencies between 2700 and 3100 MHz and is particularly suitable for use in pulse applications.
NXP Semiconductors MRF13750H/MRF13750HS RF power LDMOS transistor
16 January, 2018The MRF13750H/MRF13750HS is an RF power LDMOS transistor from NXP Semiconductors. The 750 W continuous wave transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range and is capable of CW or pulse power in narrowband operations.
High-efficiency SiC power device developed
27 September, 2017Mitsubishi Electric has developed a silicon carbide (SiC) power device with what is claimed to be the world's highest power efficiency in a device of its type, thanks to the use of a proprietary source structure.
NXP MRFX1K80H high-power RF transistor
19 September, 2017The MRFX1K80H is a 65 V, wideband RF power LDMOS transistor from NXP Semiconductors. It is designed to deliver 1800 W CW at 65 V for applications from 1.8 to 400 MHz and capable of handling 65:1 VSWR.
