Intel transistor raises speed limit
29 November, 2001Intel has unveiled a design for transistors which it says will operate at speeds hundreds of times faster than today's production devices.
Bipolar Power Transistor
13 November, 2001STMicroelectronics has introduced the first in a family of high-gain bipolar power transistors that feature low saturation voltage, making it suitable for low-voltage switching applications.
Gate Oxide Fabrication Method for MOS Devices
13 December, 2000In an increasingly mobile world of go-anywhere, do-everything personal products, the semiconductor industry is locked into a search for technologies that support lower power consumption and enhanced reliability in highly integrated LSI.