Wolfspeed GaN MMIC Transistor
21 February, 2023The gallium nitride CGHV59350F GaN MMIC transistor from Wolfspeed is 350 W, 5.2–5.9 GHz, 50Ω input/output matched and designed with high gain and wide bandwidth capabilities.
Toshiba develops SiC MOSFET with embedded Schottky barrier diode
16 December, 2022Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to realise low on-resistance and high reliability.
Infineon General-Purpose MOSFETs for power conversion applications
23 November, 2022The Infineon General-Purpose MOSFETs are designed to deliver flexibility, value and adaptability for a variety of applications.
Researchers introduce ionic circuits that compute in water
07 October, 2022Researchers at Harvard have created an ionic circuit consisting of hundreds of ionic transistors that perform the core process of neural network computing.
Flexible material developed to enable tiny transistors
05 August, 2022The tiny, transparent and flexible material could be used as a novel dielectric (insulator) component in transistors, which would enable these devices to shrink in size.
STMicroelectronics STL320N4LF8 and STL325N4LF8AG MOSFETs
05 July, 2022Cutting both on-resistance and switching loss, while optimising body-diode properties, STMicroelectronics' 40 V MOSFETs are designed to save energy and enable low noise in circuits for power conversion, motor control and power distribution.
Qorvo UF4C and UF4SC SiC field-effect transistors
17 June, 2022Qorvo has released the UF4C and UF4SC 1200 V silicon carbide field-effect transistors (FETs), a fourth-generation family of devices offering leading figures of merit in on-resistance.
GaN Systems GS-065-060-3-B/T transistors
07 June, 2022The GS-065-060-3-B is bottom-side cooled, while the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications.
UnitedSiC UF3N170400B7S JFET
28 April, 2022The transistor can be utilised by engineers for overcurrent protection circuits, DC/AC inverters, switch-mode power supplies, power factor correction modules, motor drives and induction heating applications.
Printing high-performance, perovskite-based transistors
30 March, 2022New technology enables solution-processed perovskite transistors to be simply printed as semiconductor-like circuits.
Recommendations for optimising thin-film transistors
02 March, 2022Researchers have arrived at a set of recommendations that may see an explosion in the research effort into unconventional electronic devices.
Improving defect detection in transistors
07 February, 2022Researchers have revived and improved a once-reliable technique known as charging pumping to identify and count defects in transistors — the building blocks of modern electronic devices.
Toshiba MG600Q2YMS3 and MG400V2YMS3 silicon carbide MOSFET modules
01 February, 2022Toshiba Electronic Devices & Storage has launched two silicon carbide (SiC) MOSFET dual modules: the MG600Q2YMS3, with a voltage rating of 1200 V and drain current rating of 600 A; and the MG400V2YMS3, with a voltage rating of 1700 V and drain current rating of 400 A.
STMicroelectronics STPOWER third-generation SiC MOSFETs
21 January, 2022The SiC devices are optimised for high-end automotive applications including EV traction inverters, onboard chargers (OBCs) and DC/DC converters, as well as e-climate compressors.
Stable, high-mobility transistors for next-gen displays
22 December, 2021The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin-film transistors (TFTs) has been overcome.
