STMicroelectronics STGWT28IH125DF trench gate field-stop IGBT
23 March, 2015STMicroelectronics' STGWT28IH125DF IGBTs are developed using a trench gate field-stop structure. Performance is optimised in both conduction and switching losses.
Ultrathin polymer insulators key to low-power soft electronics
16 March, 2015Researchers at the Korea Advanced Institute of Science and Technology (KAIST) have developed a high-performance ultrathin polymeric insulator for field-effect transistors (FETs).
Toshiba DSOP Advance package MOSFETs
03 March, 2015Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.
Toshiba DSOP Advance package MOSFETs
03 March, 2015Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.
Better measurements of single molecule circuits
20 February, 2015It is nearly 50 years since Gordon Moore predicted that the density of transistors on an integrated circuit would double every two years. Moore's Law has turned out to be a self-fulfilling prophecy that technologists pushed to meet, but to continue into the future, engineers will have to make radical changes to the structure or composition of circuits.
Extreme-temperature electronics
12 February, 2015 by Zhengzheng ZhangMany industries are calling for electronics that can operate reliably in a harsh environment, including extreme temperatures above 200°C.
Diodes DFN0606 NPN and PNP transistors
19 December, 2014Diodes has introduced the DFN0606-packaged NPN and PNP bipolar transistors. Occupying a board space of 0.36 mm2, the transistors are said to be 40% smaller than the DFN1006 (SOT883) parts and deliver the same or better electrical performance.
Central Semiconductor P-channel enhancement mode MOSFETs
18 December, 2014Central Semiconductor P-channel enhancement mode MOSFETs offer low rDS(ON) and low-threshold voltage.
Vishay Intertechnology trench PT and FS IGBT platform
12 December, 2014Vishay Intertechnology has introduced its trench IGBT (insulated-gate bipolar transistor) platform featuring punch-through (PT) and field-stop (FS) technologies.
TriQuint T1G4004532 and T1G4020036 RF GaN on SiC HEMTs
14 November, 2014TriQuint has released its latest RF GaN on SiC power transistors. The HEMTs are suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier and jammer applications.
World's thinnest electric generator
27 October, 2014Researchers from Columbia Engineering and the Georgia Institute of Technology have made the first experimental observation of piezoelectricity and the piezotronic effect in an atomically thin material, molybdenum disulfide (MoS2), resulting in a unique electric generator and mechanosensation devices that are optically transparent, light, bendable and stretchable.
Nanomagnets could replace transistors
03 October, 2014Future computer chips could be based on 3D arrangements of nanometre-scale magnets, instead of transistors, according to researchers at Technische Universität München (TUM).
NXP Semiconductors bipolar transistors in LFPAK56
22 September, 2014NXP Semiconductors has released what is claimed to be the industry's first bipolar transistors in LFPAK56 (Power SO-8). The transistors, in a low-profile LFPAK56 (SOT669) SMD power plastic package, are said to deliver thermal and electrical performance comparable to bipolar transistors in much larger power packages such as DPAK on less than half the footprint.
Vishay Intertechnology SiA446DJ 150 V N-channel MOSFET
25 August, 2014The SiA446DJ, from Vishay Intertechnology, is claimed to be the industry's first 150 V N-channel MOSFET in a thermally enhanced PowerPAK SC-70 package. It features low on-resistance at 10 V in the 2 x 2 mm footprint area.
IR StrongIRFET 60 V MOSFETs
16 July, 2014International Rectifier has announced the expansion of its StrongIRFET MOSFET portfolio to include 60 V devices for a wide variety of industrial applications including power tools, light electric vehicle (LEV) inverters, DC motor drives, Li-ion battery pack protection and switched mode power supply (SMPS) secondary-side synchronous rectification.
