STMicroelectronics STGWT28IH125DF trench gate field-stop IGBT
STMicroelectronics’ STGWT28IH125DF IGBTs are developed using a trench gate field-stop structure. Performance is optimised in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged.
The result is a product specifically designed to maximise efficiency for any resonant and soft-switching application, including induction heating, microwave ovens and resonant converters.
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