IR StrongIRFET 60 V MOSFETs
16 July, 2014International Rectifier has announced the expansion of its StrongIRFET MOSFET portfolio to include 60 V devices for a wide variety of industrial applications including power tools, light electric vehicle (LEV) inverters, DC motor drives, Li-ion battery pack protection and switched mode power supply (SMPS) secondary-side synchronous rectification.
International Rectifier IRG7PK35UD1 IGBT
12 July, 2014International Rectifier's IRG7PK35UD1 IGBT is co-packaged with an ultralow forward voltage diode and uses the company's Gen7 thin-wafer trench technology to deliver low VCE(ON) and ultrafast switching.
New hybrid circuit could replace silicon
19 June, 2014A new energy-efficient hybrid circuit could soon replace silicon as the traditional transistor material used in electronic chips.
Cree GaN HEMT RF transistors
18 June, 2014Cree has introduced a family of GaN HEMT RF transistors that deliver extended bandwidth, high gain and high-efficiency performance to support LTE networks.
2D transistors for faster electronics
05 June, 2014Faster electronic device architectures are in the offing with the unveiling of the fully two-dimensional field-effect transistor (FET) by researchers with Lawrence Berkeley National Laboratory.
ON Semiconductor NTMFS4Hxxx and NTTFS4Hxxx series MOSFETs
23 May, 2014ON Semiconductor has introduced six N-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The NTMFS4Hxxx and NTTFS4Hxxx series of MOSFETs are suitable as switching devices in a wide range of applications.
Lighting the way to graphene-based devices
19 May, 2014 by Lynn YarrisGraphene continues to reign as the next potential superstar material for the electronics industry, a slimmer, stronger and much faster electron conductor than silicon. With no natural energy band-gap, however, graphene's superfast conductance can't be switched off - a serious drawback for transistors and other electronic devices.
Nanowire-bridging transistors for next-gen electronics
16 May, 2014US researchers have demonstrated a new approach that could enable a new generation of fast, robust electronic and photonic devices.
ROHM SCH2080KE SiC MOSFETs
03 May, 2014The 1200 V SiC (silicon carbide) MOSFETs from ROHM feature good switching performance, low on-resistance and high breakdown voltage, making them suitable in solar inverters, three-phase inverters, DC-DC converters, uninterruptible power supplies (UPSs) and motor drives.
STMicroelectronics HB series IGBTs
17 April, 2014The HB series of IGBTs from STMicroelectronics are claimed to feature up to 40% lower turn-off energy losses than competing high-frequency devices while reducing conduction losses by up to 30%.
ROHM transistors
07 April, 2014ROHM's VML0604 package (0.6 x 0.4 mm, t = 0.36 mm) is said to reduce board space by 50% compared with alternative offerings, making it suitable for smartphones and other devices requiring smaller, thinner form factors.
Plasma-based electronics for extreme environs
24 March, 2014Small plasma transistors could enable development of smartphones that take and collect medical X-rays on a battlefield and devices to measure air quality in real time.
New technology to pave way for cheap, transparent electronics
10 January, 2014 by Tom Abate, Stanford EngineeringEngineers from the University of Nebraska-Lincoln (UNL) and Stanford University have created thin-film organic transistors that could operate more than five times faster than previous examples of this experimental technology.
Low-power tunnelling transistor for high-performance devices
20 December, 2013Researchers from Pennsylvania State University (Penn State), the National Institute of Standards and Technology (NIST) and wafer company IQE have written a paper on recent developments in compound semiconductor device technologies for high-speed and low-voltage/low-power applications.
STMicroelectronics SD4933MR moisture-resistant DMOS transistor
26 November, 2013The STMicroelectronics SD4933MR is an N-channel field-effect RF power transistor intended for use in 50 V industrial, scientific and medical (ISM) applications up to 100 MHz. The diffused metal oxide semiconductor (DMOS) transistor benefits from environmentally designed packaging.
