Cree GaN HEMT RF transistors
Cree has introduced a family of GaN HEMT RF transistors that deliver extended bandwidth, high gain and high-efficiency performance to support LTE networks.
Built on plastic dual-flat no-leads (DFN) surface-mount packages, the range includes 28 and 50 V, 15 and 30 W transistors with a range between 700 MHz to 3.8 GHz instantaneous and can be optimised for band splits. Multiband capability creates design flexibility and allows operators to reconfigure the small cell unit for different market requirements.
In high-efficiency applications, the transistors help reduce the size and weight of LTE cellular network transmitters and simplify thermal management. These efficiency gains generate significant energy savings in operational costs.
Phone: 02 9482 1944
Quectel LG680P GNSS module
The Quectel LG680P GNSS module is designed to receive signals from multiple global navigation...
Control Devices PBAK series piezo electric switches
The PBAK series of piezo electric switches from Control Devices feature a stainless steel body...
Microchip Technology PIC64GX1000 MPUs
The PIC64GX1000 MPUs from Microchip Technology feature a 64-bit RISC-V quad-core processor with...
Learn More
I am interested in Cree GaN HEMT RF transistors.
Complete the form and a supplier representative will be in touch.
