100 W GaN-on-Si power transistor for Wi MAX applications
08 August, 2007Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28 V, 100 W gallium nitride high electron mobility transistor (HEMT), ideal for WiMAX applications. Designed using Nitronex's patented Sigantic NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM — all at >10 W of power.
Distribution partnership announced
01 March, 2007Richardson Electronics has announced a North American distribution partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, transistor, Schottky and PIN diode, and millimetre wave (mmW) products.
ISM band antennas
08 November, 2006Linx Technologies' Dipole Antenna Series has an internal design, eliminating the external ground plane requirements to maximise performance.
Engineers set record for world's fastest transistor
22 August, 2006Engineers at the School of Electronics and Computer Science have developed a method to make bipolar transistors that work twice as fast as current devices.
Bipolar transistors
04 July, 2006Combining complementary NPN and PNP transistors in the SOT236 package, the ZXTC2045E6 from Zetex Semiconductors produces the drive requirement needed to switch high power MOSFETs and IGBTs in power supply designs.
Growth of GaN high-electron mobility transistors on 150 mm silicon demonstrated
20 June, 2006Growing low sheet resistivity transistors on 150 mm silicon wafers has been achieved by a European research group and presented at the 13th International Conference on Metal Organic Vapor Phase Epitaxy in Japan.
Integrated MOSFET
02 May, 2006International Rectifier has introduced the IRF4000, a 100 V-rated device integrating four HEXFET MOSFETs into a single power MLP package for power-over-ethernet applications.
Basics of MOSFETs Part 2
05 April, 2006 by Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices
Basics of MOSFETs Part 1
05 March, 2006 by Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices
Close look at power MOSFETs - Part 1
05 July, 2005 by Vrej Barkhordarian, International RectifierDiscrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are different from the design used in VLSI devices
TIG welder IGBTs
09 June, 2005Advanced Power Technology has released two IGBT products for TIG welding - APT200GN60J and APT200GN60JDQ4.
Crossbar latches take on transistors
10 May, 2005US scientists have made nano-scale devices they claim could one day replace current transistor technology. The tiny devices, 'crossbar latches', are made up of a combination of crossed-over platinum wires with steric acid molecules set at their junctions.
Computers from a single atom?
01 April, 2005What is claimed to be the world's first single-atom-thick fabric has been created by researchers at Manchester University, in Britain, and Chernogolovka, in Russia.
Radiation-hardened, logic-level MOSFETs
17 January, 2005International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
Power MOSFETs
07 September, 2004Siliconix has announced a family of TrenchFET power MOSFETs in a reverse-lead TO-252 DPAK package.
