GaN Systems has released two 650 V E-mode gallium nitride transistors, featuring low RDS(on) of 25 mΩ, a 60 A IDS rating and GaN Systems’ Island Technology cell layout for high-current die performance and yield. The devices feature an updated design and are offered in GaNPX packaging that enables low inductance and low thermal resistance in a small package.
The GS-065-060-3-B is bottom-side cooled, while the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, onboard chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.
Other features include: ultralow FOM; simple gate drive requirements (0 to 6 V); transient tolerant gate drive (-20/+10 V); high switching frequency (>10 MHz); fast and controllable fall and rise times; reverse conduction capability; zero reverse recovery loss; small footprint; and dual gate pads for optimal board layout.
Phone: 001 630 262 6800
Quectel HCM511S MCU Bluetooth module
The Quectel HCM511S MCU Bluetooth module features enhanced receiver sensitivity and a maximum...
ADLINK cExpress-ASL COM express module
The ADLINK cExpress-ASL COM express module is integrated with Intel UHD graphics with up to 32...
Sensirion SFC6000D mass flow controller
The Sensirion SFC6000D mass flow controller is designed to be small and light, thereby allowing...
