Renesas HIP2211 and HIP2210 half-bridge MOSFET drivers
22 July, 2020The HIP221x drivers are suitable for 48 V telecom power supplies, Class-D audio amplifiers, solar inverters and UPS inverters.
High-frequency transistors said to achieve record efficiency
09 April, 2020Researchers have significantly increased the output power of their high-frequency transistors for the frequency range from 1 to 2 GHz, doubling the operating voltage from 50 to 100 V.
Black phosphorus transistors with low power consumption
26 February, 2020A thickness-controlled black phosphorous tunnel field-effect transistor shows 10 times lower switching power consumption than conventional CMOS transistors.
Hybrid transistors suitable for next-generation displays
12 February, 2020An innovative manufacturing technique has led to the development of hybrid organic transistors for use in next-generation displays and large-area electronics.
Transistor technology reaches record frequencies
28 January, 2020The MOSHEMT is designed for the frequency range above 100 GHz and is therefore promising for novel communication, radar and sensor applications.
SiC-based MOSFETs offer benefits in automotive, power applications
08 January, 2020 by Jeffrey Fedison, PhD, Sr Applications Engineer, STMicroelectronicsAs conventional silicon-based MOSFETs mature, they are now reaching their theoretical limits of performance.
Diamond film boosts heat dissipation efficiency of GaN HEMTs
18 December, 2019The design is said to reduce the amount of heat generated by the devices during operations by 40%, leading to simplification of the cooling system.
2D dielectric inks for print-in-place electronics
17 December, 2019Researchers have produced a two-dimensional hexagonal boron nitride ink, which has been used to fabricate flexible thin-film transistors.
Carbon nanotube tech exceeds 100 GHz in RF applications
05 December, 2019The milestone is said to eclipse the performance — and efficiency — of the traditional RF-CMOS technology that is ubiquitous in modern consumer electronics, including mobile phones.
Wolfspeed C3M silicon carbide power MOSFETs
23 October, 2019The C3M0016120D, C3M0021120D and C3M0032120D devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode.
Fully electronic 2D spin transistors created
30 September, 2019Dutch physicists have constructed a two-dimensional spin transistor, in which spin currents were generated by an electric current through graphene.
Gallium oxide power transistors said to achieve record values
05 September, 2019Researchers have made a breakthrough in the development of transistors based on gallium oxide, achieving high breakdown voltage combined with high current conductivity.
Semikron Generation 7 IGBTs for motor drives
25 June, 2019The Generation 7 IGBTs, from Semikron, are said to represent the latest in IGBT chip technology. They are specifically designed to match the requirements of motor drive applications.
Switched on to silicon-based electronics
18 June, 2019Seeking to further increase the conversion efficiency of silicon-based components in power electronics, researchers developed a power switching device that surpasses previous performance limits.
UnitedSiC high-performance SiC FET switching transistors
01 June, 2019UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology.
