The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
How to leverage the re-emergence of DC high-voltage distribution
Learn about three operational topologies, pertinent examples and techniques that can be...
Will self-driving cars guarantee your safety?
Smart cars continue to expand autonomous driving tasks that assist or even outright...
Why touch technology won’t eliminate physical controls
What types of industrial human machine interface (HMI) designs and functionalities do...
