NXP Semiconductors A3G26D055NT4 Airfast RF power GaN transistor
The A3G26D055NT4 is a 55 W dual-path transistor that can be used in a wide range of applications from 100–2800 MHz, including wireless infrastructure, RF energy, and wideband and tactical communications.
Features include high terminal impedances for optimal broadband performance and improved linearised error vector magnitude with next-generation signal. It is able to withstand high-output VSWR and broadband operating conditions. The transistor is designed for low-complexity analog or digital linearisation systems.
In massive MIMO active antenna systems for 5G base stations, the A3G26D055NT4 provides 8 W average power in the 2.6 GHz band. The device is housed in a compact DFN 7 x 6.5 mm plastic package and produced in NXP’s 6″ GaN fab in Arizona.
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