STMicroelectronics STPOWER LDMOS transistors

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STMicroelectronics is adding a range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of commercial and industrial applications. Featuring high efficiency and low thermal resistance and packaged to handle high RF power, the LDMOS devices combine a short conduction-channel length with a high breakdown voltage, enabling low power consumption.

Expanding the range of applications that can be addressed, the STPOWER IDCH and IDDE series are 28/32 V common-source N-channel enhancement-mode lateral field-effect RF power transistors. IDCH devices provide output power from 8 to 300 W and are specifically designed for applications up to 4 GHz, including 2.45 GHz industrial, scientific and medical (ISM), wireless infrastructure, satellite communications, and avionics and radar equipment. The LDMOS devices are suitable for all types of modulation formats.

The IDDE series contains 10–700 W devices for broadband commercial, industrial and scientific applications at frequencies up to 1.5 GHz. The devices can withstand a load VSWR (voltage standing wave ratio) of 10:1, through all phases. They are suitable for all typical modulation formats, and for most classes of RF PA operation including Class A, Class AB and Class C. Their high efficiency minimises the energy needed to deliver the required output power, resulting in reduced heat dissipation — thereby simplifying thermal management and enabling more compact systems.

ST has also introduced devices in the IDEV series, featuring a 50 V common-source, N-channel-enhancement-mode, lateral field-effect, RF power transistor technology. With output power from 15 W up to 2.2 kW, the portfolio is designed for ISM applications at frequencies up to 250 MHz, including driving high-power CO₂ lasers, plasma generators, MRI systems, broadcast FM-radio transmitters in the 88–108 MHz range, and avionics and radar applications up to 1.5 GHz. They are suitable for all typical modulation formats and for PA operation in Class A, Class AB and Class C. Delivering high power from a single ceramic package, the devices reduce the total number of RF power transistors needed in high-power applications such as broadcast transmitters. Power efficiency greater than 82% minimises system power demand with simple thermal management.

For more information: www.st.com/stpower-rf-ldmos.