National Semiconductor clock jitter cleaner range
25 April, 2011 byNational Semiconductor has introduced a family of clock jitter cleaners featuring what it claims is the industry’s lowest phase noise and RMS jitter performance: 111 femtosecond (fs) from 12 kHz to 20 MHz and a wideband noise floor of -162 dBc/Hz at 184 MHz output.
International Rectifier IR3550 PowIRstage device
24 April, 2011 byInternational Rectifier has introduced the IR3550, the first in a family of integrated PowIRstage products that deliver higher efficiency and better thermal performance.
International Rectifier dual-power MOSFET range
20 April, 2011 byInternational Rectifier has introduced the company’s first family of radiation-hardened (RAD-Hard), dual-power MOSFETs in a compact hermetic LCC-6 surface-mount package for low-power, lightweight space applications requiring a small footprint such as satellite payload power systems.
Clarke & Severn STC5420 timing chip
05 April, 2011 byThe RoHS 6/6 compliant STC5420 series is a single-chip clock synchronisation solution for applications in SDH/SETS, SONET and synchronous ethernet network elements. The devices are fully compliant with ITU-T G.813 option one and two and Telcordia GR1244 and GR253.
ZMD ZLED7020/ZLED7030 LED drivers
18 March, 2011 byZMD has released two devices to complement its family of LED driver integrated circuits.
Diodes Diodestar rectifier process
18 March, 2011 byDiodes has developed a process to manufacture next-generation high-voltage rectifiers.
ON Semiconductor AEC-Q101 power MOSFETs
15 February, 2011 byON Semiconductor has introduced six AEC-Q101 qualified logic level, single-channel, power MOSFETs for motor vehicle modules in small, flat lead packages.
Vishay 8 V p-channel TrenchFET power MOSFET
11 February, 2011 byVishay has introduced an 8 V p-channel TrenchFET power MOSFET with what is claimed to be the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK SC-70 2 by 2 mm footprint area.
Renesas PS7901D-1A optical-coupled MOSFET
11 February, 2011 byRenesas has developed an optical-coupled MOSFET, the PS7901D-1A, that is claimed to achieve electrical isolation within the package by using light for signal transmission.
Avnet motor vehicle-qualified Gen 10.2 MOSFETs
06 September, 2010 byMotor vehicle-qualified 40 to 100 V Gen 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance.
Maxim MAX36051 security manager
05 August, 2010 byMaxim has introduced the MAX36051 security manager that provides 128 bytes of nonimprinting memory to securely store sensitive data, while drawing little battery power in standby mode (1.5 µA).
Chip revenue down by 114.4% in 2009
29 April, 2010The semiconductor industry will post a revenue decline for just the sixth time in the last 25 years, with worldwide revenue totalling $245 billion in 2009, an 11.4% decline from 2008, according to preliminary estimates by Gartner.
Semiconductor making made more energy efficient
09 December, 2009Scientists at the Department of Energy’s Lawrence Berkeley National Laboratory, in cooperation with the International SEMATECH Manufacturing Initiative, have released, for beta testing, a computer-based tool to help the world’s semiconductor manufacturing facilities evaluate and improve their energy efficiency.
Reliable power electronics for windmill generators
04 December, 2009In the megawatt range, high-power electronics applications need powerful semiconductors. However, even the largest semiconductors available today are still not strong enough for some applications. It is therefore necessary to connect them in parallel. The parallel connection of semiconductor devices in a traditional power electronics circuit is very common.
Reliable power electronics for windmill generators
02 December, 2009In the megawatt range, high-power electronics applications need powerful semiconductors. However, even the largest semiconductors available today are still not strong enough for some applications. It is therefore necessary to connect them in parallel. The parallel connection of semiconductor devices in a traditional power electronics circuit is very common.
