STMicroelectronics Page EEPROM two-in-one memory
06 November, 2024The STMicroelectronics Page EEPROM two-in-one memory is suitable for applications such as healthcare devices, asset trackers and e-bikes, as well as other industrial and consumer products.
New discovery aims to improve the design of microelectronic devices
19 September, 2024 by University of MinnesotaTo enhance the effectiveness of data storage solutions, researchers have studied how next-generation electronics such as computer memory components malfunction or deteriorate over time.
Enhancing next-generation ferroelectric memory technology
19 June, 2024A team of researchers have enhanced the efficiency and data storage capacity of hafnia-based ferroelectric memory devices, marking an advancement in memory technology.
Advantech SQRAM DDR5 Memory
02 November, 2023Advantech has released the SQRAM DDR5 5600 Series Memory, featuring speeds of up to 5600 MT/s and a bandwidth capability from 8 to 48 GB.
Scientists develop new phase-change non-volatile memory
12 September, 2023The researchers used room temperature thermally reversible electrical resistance switching in layered nickelate to develop the new material.
MEMPHIS Electronic DDR5 memory modules
20 October, 2022MEMPHIS Electronic has launched a family of DDR5 memory modules, configured with 16 and 32 GB capacities and 5600 MHz clock frequency.
Engineers present chip that boosts AI computing efficiency
24 August, 2022Engineers have created a more efficient and flexible AI chip that has the potential to bring the power of AI into small edge devices.
STMicroelectronics Serial Page EEPROM
08 July, 2022STMicroelectronics has introduced its Serial Page EEPROM — a high-density, page-erasable SPI memory that delivers high flexibility and performance with ultralow power consumption.
Innodisk industrial-grade DDR5 DRAM modules
24 May, 2022DDR5 has a theoretical maximum transfer speed of 6400 MT/s, doubling the rate of DDR4.
Resilient system uses only non-volatile memory
03 May, 2022The Lightweight Persistence Centric System (LightPC) makes the systems resilient against power failures by utilising only non-volatile memory as the main memory.
Reducing disturbance in next-gen magnetic RAM
23 March, 2022Japanese scientists have identified a source of disturbance during the read operation in SOT-RAMs that compromises their reliability.
Renesas develops write technologies for embedded STT-MRAM
25 February, 2022On a 20-Mbit test chip with an embedded MRAM memory cell array, a 72% reduction in write energy and a 50% reduction in the voltage application time were confirmed.
Neuromorphic 'memtransistor' resembles a human brain
22 February, 2022In this optoelectronic memory device, multiple resistance states can be tuned by applying different voltages, or light powers.
Advantech SQRAM DDR5 4800 series memory
03 February, 2022Advantech's SQRAM DDR5 4800 series leverages next-generation DRAM technology to deliver high performance and compatibility.
Samsung demonstrates MRAM-based in-memory computing
20 January, 2022It has so far been difficult to use MRAM for in-memory computing, despite MRAM's merits such as operation speed, endurance and large-scale production.
