STMicroelectronics Page EEPROM two-in-one memory

STMicroelectronics’ Page EEPROM combines the power efficiency and durability of an EEPROM with the capacity and speed of a Flash memory, creating a hybrid memory for applications that face size and power constraints. In addition to wearables, Page EEPROM is suitable for applications such as healthcare devices, asset trackers and e-bikes, as well as other industrial and consumer products.

The Page EEPROM family offers densities of 8, 16 and 32 Mb, thereby increasing storage over standard EEPROM devices. Embedded smart page-management allows byte-level write operations for processes like data logging, while also supporting page/sector/block erase and page-program up to 512 B for handling firmware over-the-air (OTA) updates. The devices also allow buffer loading, which can program several pages simultaneously to cut the time for loading software in production. The data-read speed of 320 Mbps is approximately 16 times faster than standard EEPROM, while write-cycle endurance of 500,000 cycles is higher than conventional serial Flash.

Also featuring a novel peak-current control, Page EEPROM reduces power supply noise and prolongs the runtime of battery-operated equipment. The write current is below that of many conventional EEPROMs and there is also a deep power-down mode with fast wakeup that reduces the current to below 1µA.

The X-NUCLEO-PGEEZ1 expansion board and X-CUBE-EEPRMA1 software package are also available, for users to learn how to interact with Page EEPROM and adopt the new devices in application designs. The software includes a demonstration application that shows how to test the memory’s hybrid architecture and quickly build a proof of concept.