Renesas Electronics has announced six products in the 8th-generation G8H Series of insulated gate bipolar transistors (IGBTs) that minimise conversion losses in power conditioners for solar power generation systems and reduce inverter applications in uninterruptible power supply (UPS) systems.
The six products are rated at 650 V/40, 50 and 75 A and at 1250 V/25, 40 and 75 A. The company has also achieved a TO-247 plus package for a 1250 V IGBT with built-in diode, which offers system manufacturers good circuit configuration flexibility.
The IGBTs have adopted an exclusive trench gate configuration in the process structure. Compared to previous IGBT generations, the devices are said to provide faster switching performance while also reducing conduction loss by lowering the saturation voltage.
The performance index for the 8th-generation devices has been improved by up to 30% compared to previous 7th-generation IGBTs, contributing to lower power loss and better overall performance for user systems. These updates are important for key markets in the power industry focusing on photovoltaic inverters, UPSs, industrial motor drives and power factor correction.
Originally published here.
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