International Rectifier has introduced the IRF3000, a 300 V, n-channel HEXFET power MOSFET developed to replace electromechanical relays in telecom and networking applications.
Because the device is a solid state semiconductor and has no mechanical parts, it increases overall system reliability and is up to 30% smaller than an electromechanical relay.
The IRF3000 is more efficient than an electromechanical relay, with more than 90% reduction in on-state resistance compared with mechanical relays, minimising conduction losses. The device is easier to drive than a relay, simplifying circuits and reducing overall system cost. The device offers up to 30% cost savings compared with mechanical relays.
The device is designed for switching requiring a low current switch (1.6 A) with up to 200 V input that does not require isolation or when the load voltage does not reverse polarity.
The MOSFET is also suitable for use in high frequency DC-DC converters.
The device is rated at 300 V breakdown voltage providing the required safety margin for up to 200 V input switching applications.
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