Power MOSFETs

Next-generation TrenchFET technology yielding devices that redefine state-of-the-art for power MOSFETs has been announced by Siliconix.

The company is using this platform to build what it claims is the industry's first power MOSFET to break the 4 milliohm barrier in the SO-8 footprint.

Products built on TrenchFET Gen II technology are based on a 300 million-cells-per-square-inch platform offering a specific on-resistance of 12 milliohm/mm2, a 30% improvement over previous-generation silicon. In addition to its higher cell density, TrenchFET Gen II uses a new stripe topology that reduces mask count by 28%.

The first products built on the new technology are the 30 V n-channel Si4320DY (Little Foot SO-8) and Si7356DP (PowerPAK SO-8), both of which are designed to serve as high-performing, cost-effective solutions for low-side operation in synchronous buck DC-DC converters in notebook computers and for secondary synchronous rectification in fixed telecom applications.

Their on-resistance specifications are 4 milliohm at 4.5 V and 3 milliohm at 10 V.

The devices provide efficient in-circuit performance that reduces power consumption and prolongs battery life in end systems. This increased efficiency allows systems to run cooler and contributes to a cycle in which on-resistance and conduction losses are further reduced.

A typical application circuit test on a dual-phase evaluation board demonstrates a gain of nearly 1% in efficiency and a reduction of device temperature by 7°C.