IGBT family

The insulated gate bipolar transistor (IGBT) product family SeMix is characterised by its flexibility and scalability.

Due to the height of the power terminals at 17 mm, the modules can provide almost twice the volumetric power density of 62 mm modules with identical silicon chips. The devices will initially be available in three module case sizes in the topologies half-bridge or chopper and the six-pack SeMix 33.

The family is a platform design that is available in different module lengths for various power classes.

The family is available with 600, 1200 and 1700 V IGBT3 trench technology; the 1200 V modules also come in IGBT3 planar technology.

The current range lies between 200 and 700 A. The freewheeling diode used is a CAL diode (controlled axial lifetime) with high dynamic robustness.

This diode is used in fast or hard switching applications. The softness of the diode reduces EMC interference throughout the entire temperature range.

The advantage of the module series is its flexibility because it supports both external drivers and internal drivers.

An inverter can be configured separately using a six-pack or even thermally isolated half-bridges. The new family is specially designed for drives and converters in the medium to upper power range.