Carbon Nanotube Technology

Scientists from Infineon Technologies in Munich claimed to have made a breakthrough in carbon nanotube (CNT) research. A microelectronics process was modified so that CNTs could be grown at predefined locations on 6" wafers. The properties of the CNTs, which include current densities up to 1010 A/cm2 and thermal conductivities almost twice that of diamond, can now be used in wafer-compatible processes for IC development . The features of CNTs have made them the material for future semiconductor technology with considerable increase in on-chip clock frequencies.

The first possible application of the present technological innovation are in vias which are the contact bridges between two metal layers in ICs. Due to the high current densities and associated heating, conventional vias tend to distort and impair the operational ability of the chips. Through the use of CNT vias this should no longer be a problem, since they can handle considerably larger current densities and also possess a much higher mechanical stability.

Active switching elements, such as FETs, can also be made with CNTs.

Researchers at Infineon are also working on growing semiconducting CNTs on wafers using the same catalytic deposition method. "It is very possible that this technology could completely replace silicon-based semiconductor technology", claims team leader Dr Honlein.

For further information contact:

Infineon Technologies AG PO Box 80 09 49 D-81609 Munchen Germany