MACOM MABT-011000 integrated bias network

The MABT-011000 is a rugged, fully monolithic, broadband, surface-mount bias network that utilises MACOM’s HMIC process. This process allows the formation of silicon vias by embedding them in low-loss, low-dispersion glass along with high-Q spiral inductors and metal-insulator-metal (MIM) capacitors. The close proximity of elements and the combination of silicon and glass give the HMIC device low loss and high performance, with good repeatability through millimetre frequencies.

The bias network is suitable for the DC biasing of PIN diode control circuits. It functions as an RF-DC decoupling network, as well as the DC return, and contains a series DC blocking capacitor with DC currents up to 60 mA and DC voltages up to 50 V. Additional features include: specified over broad bandwidth (2-18 GHz), low insertion loss (<0.3 dB) and high RF-DC isolation (>34 dB).