STMicroelectronics MasterGaN3 and MasterGaN5 integrated power packages

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Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics has released the MasterGaN3 and MasterGaN5 integrated power packages for applications up to 45 and 150 W, respectively.

Joining the MasterGaN1, MasterGaN2 and MasterGaN4, which target applications from 65 to 400 W, the additions give extra flexibility to choose the optimum gallium nitride (GaN) device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage power-factor correction (PFC) and DC/DC converters.

ST’s MasterGaN concept is designed to simplify migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650 V power transistors with optimised high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, the integrated devices enable robust power supplies that are said to be up to 80% smaller than silicon-based designs.

The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225 and 450 mΩ, making them suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450 mΩ Rds(on) for use in topologies such as LLC-resonant and active clamp flyback.

Both devices have inputs compatible with logic signals from 3.3 to 15 V, which simplifies connection of a host DSP, FPGA or microcontroller and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, overtemperature protection and a shutdown pin.

The devices are housed in a 9 x 9 mm GQFN package optimised for high-voltage applications with 2 mm creepage distance between high-voltage and low-voltage pads.

For more information: www.st.com/mastergan.