SiC in power electronics
Supplied by Semikron on Monday, 22 September, 2014
The total market of SiC power devices is predicted to rise to more than US$1 billion by 2021.
Being a wide bandgap material, SiC offers new approaches to the design of power semiconductors. With SiC, the conventional soft-turn off silicon diodes can be replaced by Schottky diodes, which offer low switching losses. Plus, SiC has a 3 times higher thermal conductivity compared to silicon. Together with small losses, SiC is an ideal material to boost power density in power modules.
The future looks promising for SiC in power electronics. Download this white paper for a comprehensive review.
How to solve SWaP-C challenges with 270 V input applications
Defence applications with 270 VDC input must meet stringent EMI, environmental and power-related...
Fast startup solutions for sensorless motors
Learn how to solve various problems that tend to occur with sensorless motors, making it possible...
Comparing the incomparable: understanding and comparing IGBT module datasheets
This white paper explains the component parameters of IGBT modules, points out possible...

