SiC in power electronics
Supplied by Semikron on Monday, 22 September, 2014
The total market of SiC power devices is predicted to rise to more than US$1 billion by 2021.
Being a wide bandgap material, SiC offers new approaches to the design of power semiconductors. With SiC, the conventional soft-turn off silicon diodes can be replaced by Schottky diodes, which offer low switching losses. Plus, SiC has a 3 times higher thermal conductivity compared to silicon. Together with small losses, SiC is an ideal material to boost power density in power modules.
The future looks promising for SiC in power electronics. Download this white paper for a comprehensive review.
[White paper] Optimising high-density power design: modular vs discrete
Learn about modular and discrete high-density...
Your guide to the latest IGBT chip technology
Learn about how you can reduce your power losses and increase maximum output power and power...
Comparing the incomparable: understanding and comparing IGBT module datasheets
This white paper explains the component parameters of IGBT modules, points out possible...

