Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
Related White Papers
DC-DC converter module tips to achieve up to ±1% regulation
Learn how to reach a regulation accuracy of ±1% at...
New highly efficient bidirectional DC-DC converter for DC-BUS and battery bank interface
With the growth in use of renewable sources of power, the energy storage systems (ESS) market,...
Valuable insights on obsolescence from the aerospace and defence industry
Discover insights identified to meet the obsolescence challenges you face today. Examine...
