Advanced GaN technology revolutionises power switching

Supplied by Mouser Electronics on Monday, 07 August, 2017

Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.

Learn how to use GaN technology to successfully optimise your power device.

Related White Papers

[eBook] Leveraging Edge AI — your roadmap

Edge AI: what you need to know to maximise...

Enabling Mechatronics Product Development with Digital Prototyping

This white paper features information on how Digital Prototyping enables manufacturers to...

Power electronic systems: the effects of humidity and condensation

Explore key design tips that you need to mitigate...

Content from other channels on our network

Monash University launches critical minerals initiative

TeamViewer brings AI to remote assistance AR for frontline workers

Belden and Tulip partner to gather data from legacy equipment

Energy and manufacturing future for two Hunter coal sites

Claroty and Frenos partner to reduce OT downtime risk

Safer skies: advancing mining drone operations

Mission-critical recording specialist DataVoice joins TCCA

Leveraging body worn cameras in retail: a new layer of safety and security

Nokia announces AI‍-‍native RAN platform

Best of both worlds: charting the hybrid future in Australia

From stone age to open source, community is key

Red Hat, IBM launch open source threat remediation tool

As Australia pushes for sovereign AI, four challenges stand in the way

Cloudflare launches superior CAPTCHA alternative

Visibility and governance will define the next phase of AI investment

All content Copyright © 2026 Westwick-Farrow Pty Ltd