Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
Related White Papers
Make solid design choices with stimulus-response measurements
Learn about how common stimulus-response measurements can maximise your product. Examine...
Semiconductor protection tips for 3-level topologies
This application note describes the control and protection of power semiconductors in 3-level NPC...
The radical advances in robotic movement
Robotics is a basically a simple feedback loop — instructions sent to an appendage,...
