Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
State-of-the-art electronics: advancing design systems for the future
[White paper] Smarter tech by design — insights...
Practical EMI control in a power component design space
Learn how to mitigate noise to a great extent by design, using equipment commonly available in...
Hard switching solution for moderate to high switching environments
New compact solutions for device packaging, silicon integration and MOSFET technology work...

