TriQuint/Qorvo TGF3015-SM input-matched transistor

The 10 W (P3 dB), 50 Ω input-matched TGF3015-SM is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimise power and efficiency for any region within the band. The device is housed in a 3 x 3 mm package.

Key features include: output power (P3 dB) of 11 W at 2.4 GHz; linear gain of 17.1 dB at 2.4 GHz; typical PAE3 dB of 62.7% at 2.4 GHz; operating voltage of 32 V. With a low thermal resistance package and being CW and pulse capable, the product is suitable for military and civilian radar, land mobile and military radio communications, test instrumentation, wideband or narrowband amplifiers and jammer applications.