Richardson has announced full design support capabilities and immediate availability of four gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.
The S-band amplifiers are fabricated on TriQuint’s production 0.25 μm GaN on SiC process (TQGaN25). Covering 2.7 to 3.7 GHz, the amplifiers are suitable for commercial and military S-band applications and can support short pulse and continuous wave (CW) operating conditions.
The RF ports have integrated DC blocking capacitors and are fully matched to 50 Ω for simple system integration.
Phone: 02 8883 4670
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