STMicroelectronics silicon-carbide power devices for hybrid and electric vehicles

STMicroelectronics has announced high-efficiency power semiconductors for hybrid and electric vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101.

In EVs and hybrids, ST’s silicon-carbide (SiC) technology enables auto makers to create vehicles that travel far and recharge fast. The company’s latest rectifiers and MOSFETs for high-voltage power modules and discrete solutions address all the vehicle’s main electrical blocks. These include the traction inverter, onboard battery charger and auxiliary DC-DC converter.

Silicon carbide is a wide-bandgap technology that allows small device geometries capable of operating well above the 400 V range of today’s electric and hybrid drivetrains. The small SiC diode and transistor structures present low internal resistance and are said to respond more quickly than standard silicon devices, which minimises energy losses and allows associated components to be smaller, saving even more size and weight.

ST is currently fabricating SiC MOSFETs and diodes on 4″ wafers. In order to drive down the manufacturing costs, improve the quality and deliver the large volumes demanded by the auto industry, the company is scaling up its production of SiC MOSFETs and diodes to 6″ wafers.

The STPSC20065WY 650 V SiC diode is in full production now in DO-247. The range also includes lower current ratings and smaller form-factor TO-220 package options. The STPSC10H12D 1200 V SiC diode is sampling now to lead customers in the TO-220AC package. Multiple current ratings from 6 to 20 A and packaging options will be available.

The SCTW100N65G2AG 650 V SiC MOSFET is sampling now to lead customers in the HiP247 package. To enable more compact designs, a 650 V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101.