M/A-COM Technology Solutions power transistor range

Eight devices constructed with gallium nitride (GaN) on silicon carbide (SiC) form a family of power transistors that targets L- and S-band applications from 960 to 3500 MHz.

The devices offer 50 V operation with greater than 175 W breakdown voltage, are offered in thermally enhanced Cu/Mo/Cu flanged ceramic packages and are EAR99-compliant.

Features of the MAGX-000912-125L00 and MAGX-000912-250L00 include: 969-1215 MHz frequency range; GaN on SiC HEMT 125 and 250 W pulsed power transistors; internally matched; common source configuration; good power added efficiency: 60%; developed for avionics applications, including Mode-S, TCAS, JTIDS, DME and TACAN.

Features of the MAGX-001220-100L00 include: 1200-2000 MHz frequency range; GaN on SiC HEMT 100 W power transistor; high gain, efficiency and ruggedness over a wide bandwidth; drain efficiency: 55%; will withstand 10:1 load mismatches.

Features of the MAGX-002731-030L00 and MAGX-002731-100L00 include: 2700-3100 MHz frequency range; GaN on SiC HEMT 30 and 100 W pulsed power transistors; extreme ruggedness; up to 175 V breakdown; developed for pulsed radar.