Crystal Technology has launched PPLN (periodically poled lithium niobate) chips for the generation of green laser light from a conventional semiconductor laser source.
Epcos is believed to be the only company able to manufacture PPLN chips in the quantities required for high-volume green laser applications.
While compact semiconductor laser sources for red and blue light are already available, there are none capable of directly emitting green light. The latest PPLN chips make it possible to convert the near infrared wavelength of a singlemode laser at 1060 nm to a green laser at 530 nm.
The chips can be used in applications such as miniature projectors in mobile phones, notebook computers or other compact mobile devices, head-up displays in vehicles, micro-displays in headsets or displays in retail outlets.
Using the process of periodical poling, the manufacturer inverts the polarisation of the lithium niobate wafer into a series of alternating crystal domains that measure about 3.5 µm throughout the wafer thickness of 0.5 mm.
The PPLN material is doped with magnesium oxide to make it capable of withstanding high light intensities. MgO:PPLN chips are available both with and without dielectric anti-reflection coating.
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