Dual MOSFET combo

Diodes has released a complementary pair of 100 V enhancement mode MOSFETs into an SO8 package, claiming to achieve the same performance of much larger individually packaged parts.

The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48 V applications.

It enables designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count and simplifies gate drive circuit layouts.

The SO8 package’s footprint of 31 mm² is 30% that of two SOT223 MOSFETs.

The MOSFETs used in the dual device package exhibit low gate charge and typical R_DS(ON) of 230 and 235 mΩ at VGS of 10 V, ensuring switching and on state losses are minimised. Power dissipation figures are 2.4 and 2.6 W.