Rohm has recently developed a Schottky barrier diode (RB063L-30) that has both a low VF (forward voltage) and low IR (reverse current).
The device achieves: VF = 0.30 V at IF = 1.0 A; IR = 50 µA at VR = 30 V.
To minimise the power requirements of the miniature Schottky barrier diodes, both the VF and IR must be reduced.
When attempting to lower the VF and the VR, the IR rises in most component designs.
The RB063L-30 can maintain a low VF while also achieving large reductions in IR because of the sub-micron process technology used to manufacture this component.
Not only does this component offer improved power efficiency, but the design incorporates a structure for this type of device that ensures that this Schottky barrier diode provides good resilience to power surges and electrostatic charges.
Phone: 03 9878 3077
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