Faster FeRAM on the way
Epson is developing a ferroelectric material for ferroelectric random-access memory (FeRAM), a next generation type of memory. The new material has been tentatively named PZTN.
To create the material, Epson has added niobium in place of some of the titanium in lead zirconate titanate (PZT), a candidate for use in FeRAM material. Using an original technique, the company has been able to introduce niobium in 20 to 30 times the quantity that was previously practically possible.
As a result, Epson has been able to overcome the oxygen deficit that had caused problems with FeRAM.
The company is now proceeding with technical testing of the FeRAM-based electronic devices using the PZTN material. Potential applications may include IC cards, mobile phones and as a semiconductor memory substitute.
2D semiconductor can be programmed and erased with light
A new 2D semiconductor responds to different wavelengths of light, allowing its conductivity and...
Novel silicon carbide transistors operate at 600°C
A new silicon carbide transistor design developed at Kyoto University enables reliable operation...
Light triggers novel ferroelectric switching mechanism
A light-triggered ferroelectric switching mechanism could improve the energy efficiency of future...
