STMicroelectronics STGAP2SiCSN single-channel gate driver

Thursday, 04 November, 2021 | Supplied by: STMicroelectronics Pty Ltd

STMicroelectronics STGAP2SiCSN single-channel gate driver

STMicroelectronics’ STGAP2SiCSN single-channel gate driver, optimised to control silicon-carbide MOSFETs, comes in a space-saving, narrow-body SO-8 package and delivers robust performance with PWM control.

As SiC technology becomes widely adopted to boost power-conversion efficiency, the gate driver simplifies design, saves space and enhances robustness in energy-conscious power systems, drives and controls, according to the company. Applications include electric-vehicle charging systems, switched-mode power supplies, high-voltage power-factor correction (PFC), DC/DC converters, uninterruptible power supplies (UPS), solar power, motor drives, fans, factory automation, home appliances and induction heating.

Featuring galvanic isolation between the gate-driving channel and the low-voltage control, the product operates with up to 1700 V on the high-voltage rail. The input-to-output propagation time of less than 75 ns is designed to enable high PWM accuracy, with common-mode transient immunity (CMTI) of ±100 V/ns. Built-in protection includes undervoltage lockout (UVLO), with a threshold tuned to prevent SiC power switches from operating in low-efficiency or unsafe conditions, and thermal shutdown that turns both driver outputs low if excessive junction temperature is detected.

Two optional configurations are available, giving a choice of separate outputs that allow turn-on and turn-off times to be independently optimised using an external resistor or a single output with active Miller clamp function. The single output configuration enhances stability in high-frequency hard-switching applications, the company says, leveraging the Miller clamp to prevent excessive oscillation of the power switch.

The logic inputs are compatible with TTL and CMOS logic down to 3.3 V, simplifying connection to a host microcontroller or DSP. The driver can sink and source up to 4 A at gate-driving voltage up to 26 V. An integrated bootstrap diode simplifies design and a shutdown mode with separate input pin helps minimise system power consumption.

For more information: www.st.com/stdrive.

Online: www.st.com
Phone: 02 9158 7200
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