STMicroelectronics rad-hard diodes and rectifiers

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STMicroelectronics has extended its portfolio of radiation-hardened power devices qualified for space applications by introducing ESCC (European Space Components Coordination) qualified 200 and 400 V power rectifiers and SEB-immune Schottky rectifiers at 45 and 150 V.

The rad-hard Schottky diodes include 45 and 150 V devices, SEB immune up to 61 MeV/cm²/mg linear energy transfer (LET). The SEB-rated Schottky devices are suited to use in many converter topologies. The 150 and 45 V devices are ready for direct connection to 100 and 28 V satellite power buses. The forward voltage (V_F) of the 150 V devices is 0.78 V (max) at 40 A/125°C. The maximum V_F for the 45 V devices is 0.61 V.

ST is launching five ESCC-qualified dual common-cathode Schottky parts. The STPS40A45C that contains a 45 V/2x20 A diode in a TO-254AA through-hole package, the STPS80A45C with a 45 V/2x40 A diode, the STPS60A150C 150 V/2x30 A and the STPS80A150C 150 V/2x40 A are packaged as SMD.5 hermetic surface-mount devices. The STPS40A150C 150 V/2x20 A is offered in TO254AA.

The rectifier diodes are the STTH40200C 200V/2x20A dual diode in TO-254AA, and the STTH60200C dual 200V/2x30A and STTH60400 single 400V/60A diode in hermetic SMD1.

ST claims that its rad-hard rectifiers and Schottky diodes are guaranteed by characterisation to resist a total ionising dose (TID) up to 3 Mrad (Si). The voltage drop is guaranteed at four values of operating current to let multiple different power-supply designs use a single device type for ease and simplicity. The devices are fabricated using the same planar technology as ST’s AEC-Q101 automotive-qualified devices, which should ensure good quality assurance.

For more information: www.st.com/rad-hard-diodes-pr.