STMicroelectronics MasterGaN2 power system-in-package (SiP) family

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Building upon the advantages of STMicroelectronics’ MasterGaN platform, the MasterGaN2 contains two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies.

The 650 V normally-off GaN transistors have on-resistance (R_DS(on)) of 150 and 225 mΩ. Each is combined with an optimised gate driver, making GaN technology as easy to use as ordinary silicon devices. By combining advanced integration with GaN’s inherent performance advantages, the MasterGaN2 is designed to further extend the efficiency gains, size reduction and weight savings of topologies such as active clamp flyback.

The power system-in-package (SiP) family combines the two GaN high-electron-mobility transistors (HEMTs) and associated high-voltage gate drivers in the same package with all necessary protection mechanisms built in. The designer can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA or microcontroller directly to the MasterGaN device. The inputs are compatible with logic signals from 3.3 to 15 V, which helps simplify the circuit design and bill of materials, permits a small footprint and streamlines assembly. This integration helps raise the power density of adapters and fast chargers.

GaN technology is driving the evolution towards fast USB-PD adapters and smartphone chargers. ST’s MasterGaN enables these to become up to 80% smaller and 70% lighter, while charging three times faster compared to ordinary silicon-based solutions, the company claims.

The built-in protection comprises low- and high-side undervoltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin and overtemperature protection. The 9 x 9 x 1 mm GQFN package is optimised for high-voltage applications, with over 2 mm creepage distance between high- and low-voltage pads.

For more information: www.st.com/mastergan.