The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
How to solve SWaP-C challenges with 270 V input applications
Defence applications with 270 VDC input must meet stringent EMI, environmental and power-related...
Next-gen LED devices propel lighting to the next level
With the ability to illuminate large areas, either indoors or outdoors, lighting engineers...
