The SiC revolution — reliable, efficient and cost-effective

Supplied by Semikron on Friday, 12 August, 2022

Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.

Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.

DOWNLOAD

12 Pages PDF

Related White Papers

How to design military-grade, rapid-start power applications

Learn about the critical areas of consideration when designing an isolated power system...

Your guide to building a test system — switching and multiplexing

Understand the fundamentals of switching and multiplexing to build a smarter test system...

How to effectively connect IGBT power modules in parallel

Learn about the causes that can be attributed to an asymmetrical current distribution....

Content from other channels on our network

Leveraging body worn cameras in retail: a new layer of safety and security

Future-proofing RNZ's infrastructure

Is your agency truly ready for AI in public safety?

An introduction to interference hunting

TCCA to host sixth annual CCBitesize webinar for Australasian CC sector

Cloudflare launches superior CAPTCHA alternative

Visibility and governance will define the next phase of AI investment

APAC workers in need of phishing training: report

AI governance: the next challenge in AI adoption

Closing the AI skills gap is not just a hiring problem

Subsea cable system to connect India, Malaysia and Singapore

Passive cooling and the future of HVAC

Volvo announces Australian electric truck milestone

Project Marinus confirmed as key project in Integrated System Plan

Solar and batteries for all NSW public schools: Labor motion passed