The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
How to build a smarter ultra-wide DC-DC converter
Learn how to design an ultra-wide DC-DC converter using multiple parts and maximise your...
Edge data collection, process monitoring, AI integrated solutions and services
Examine key strategies that can address...
Your guide to the latest IGBT chip technology
Learn about how you can reduce your power losses and increase maximum output power and power...
